SMD transformers optimized for SiC MOSFET gate drivers

The WE-AGDT series makes a new SMT assembly transformer available, which, at the same time, is part of a power supply solution developed by Würth Elektronik for demanding gate control of SiC MOSFETs. The innovative WE-AGDT is a compact transformer in an EP7 package. It features a wide input voltage range from 9 to 36 V, a high saturation current of 4.5 A, as well as very low leakage inductance, and very low capacitance of 6.8 pF between the windings. This gives rise to high common-mode transient immunity (CMTI) of the gate driver system.

The WE-AGDT series comprises six transformers, each optimized for its respective reference design. Thanks to their two separate secondary windings, they allow both bipolar (+15 V, -4 V) and unipolar (+15 V to +20 V, 0 V) output voltages. The input voltage of 9 to 36 V achieves a maximum output power of 3 to 6 W. WE-AGDT transformers are optimized for SiC applications, but are also suitable for optimally controlling IGBT and power MOSFETs, and, given a suitable DC-DC converter, even for high-voltage GaN FETs. Würth Elektronik’s reference design for a compact, galvanically isolated DC-DC converter for SiC MOSFET gate drivers is available at www.we-online.com/RD001.

WE-AGDT is available from stock without a minimum order quantity. On request, free samples are made available to developers.