Heraeus Electronics will showcase its latest innovation in Booth 353 at SEMICON West 2025, taking place October 7–9 at the Phoenix Convention Center in Arizona.
At the event, Heraeus Electronics will introduce a new vertical wire bonding technology for fine-pitch applications, designed to address the growing challenges in memory packaging and stacked device architectures. Leveraging a half-cut capillary and 18μm bonding wire, the solution achieves a stable bonding process with unprecedented precision and consistency.
Extensive evaluation demonstrated that the process consistently maintains post height variation (ΔH) within 10μm across a 150–350μm range, delivering highly reliable connections essential for next-generation devices. Wires with moderate ductility—such as 4N and 2N gold (Au) and coated silver (Ag)—exhibited excellent performance with minimal variation in X-shift, Y-shift, and vertical post height. Other tested wire types, including alloyed silver, copper (Cu), and AFPC (gold flash palladium-coated copper), also met the demanding requirements when optimized for wire diameter, elongation, and capillary design.
“Vertical wire bonding is an increasingly critical technology for fine-pitch applications in the memory sector, where stacked device architectures demand both precision and reliability,” said Cathy Chen, Product Manager at Heraeus Electronics. “Our latest development provides a proven, stable process window with the flexibility to support a wide range of bonding wire types—paving the way for more reliable and scalable manufacturing.”
Additionally, at the event, Heraeus Electronics will present “Low-Temperature SnBiAg Solder Solution for Flexible Substrate” on Tuesday, October 7th.
Visitors to Booth 353 at SEMICON West can learn more about this breakthrough technology and explore how Heraeus Electronics is helping shape the future of fine-pitch vertical wire bonding.
For more information about Heraeus Electronics, visit www.heraeus-electronics.com.
