CEA-Leti and GlobalFoundries are extending fully depleted silicon-on-insulator development through the European FAMES Pilot Line.
The programme builds on more than two decades of collaboration between the research institute and foundry, with work focused on device enhancements, next-generation substrates, and routes from early-stage research into manufacturable low-power platforms.
FAMES is backed by the European Commission and participating Member States through the Chips Joint Undertaking. Its research agenda covers RF design for 5G and 6G power amplifiers, embedded non-volatile memory for edge compute, ultra-low-power biomedical wearables, cybersecure components, and future 3D heterogeneous integration.
FD-SOI remains one of Europe’s more differentiated semiconductor platforms because it addresses markets where power efficiency, radiation tolerance, mixed-signal capability, cost, and lifecycle support can carry more weight than the smallest available process node. Automotive microcontrollers, satellite communications, industrial electronics, edge AI, medical wearables, and secure connected systems all sit within that design space.
Pilot lines are increasingly important because they close the gap between laboratory device work and production qualification. Customers and manufacturing partners need practical routes to evaluate reliability, integration, packaging, and process transfer before committing to higher-volume programmes.
Europe’s semiconductor strategy will not rest only on large fabs. Specialised platforms, proven research-to-manufacturing routes, and application-led silicon all form part of the region’s industrial position. FD-SOI gives Europe a defensible route into low-power, embedded, RF, secure, and high-reliability applications.
