Nissin and University of Arkansas collaborate on innovative power semiconductor tech
Ion Implanter for SiC Power Devices (IMPLANT-II). Image courtesy Nissin
Japanese ion implanter manufacturer Nissin Ion Equipment is collaborating with a silicon carbide (SiC) facility in the US to create next gen power semiconductor technologies and integrated circuits.
Nissin Ion, a group company of Kyoto-headquartered Nissin Electric, is partnering with the University of Arkansas’ Multi-User Silicon Carbide Research and Fabrication Facility (MUSiC), to create the tech.
The collaboration, says Nissin in a release, will be reflected in next-generation equipment and performance-enhanced power semiconductors, which will enable cleaner and more economical energy use.
According to Nissin, the tech they develop alongside MUSiC will be instrumental in enabling clean tech applications, including solar power generation, xEV (the name given to the range of electromotive vehicles) and general electronics, resulting from SiC’s efficiency, durability and heat resistance.
Through the collaboration, Nissin Ion will provide MUSiC with IMPHEATII technology, a high-temperature ion implanter, and with them start a three-year joint research programme in 2025 to develop ion implantation knowledge required for advanced devices.
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According to the University of Arkansas, MUSiC is the only low-volume SiC integrated circuit fabrication facility and will be the first openly accessible facility to create new power semiconductor technologies and integrated circuits that will be the seeds of start-up companies worldwide.
This facility provides an opportunity for prototyping, demo, and device design by any researchers and companies.
It will also provide training to students and develop the next generation of leaders in an expertly trained semiconductor community.
In the US, several top SiC power device manufacturers, states Nissin, as well as fabless SMEs – semiconductor companies without a production line – have announced or are considering participating in the programme.
According to Nissin Ion, which has been developing and manufacturing the IMPHEAT series, an ion implanter for SiC high-temperature processing, they were one of the first to enter the SiC power device market.
