MOSFET increases power density in modern automotive applications

Diodes Incorporated has announced the PowerDI8080-5, a high current, thermally efficient power package that meets the needs of electric vehicle (EV) applications. 

The first product to be released in the PowerDI8080-5 package is the DIODES DMTH4M70SPGWQ, a 40V automotive-compliant MOSFET that features a typical RDS(ON) of just 0.54mΩ at a gate drive of 10V, while its gate charge is 117nC. This industry-leading performance enables designers of automotive high-power BLDC motor drives, DC-DC converters, and charging systems to maximise system efficiency while ensuring power dissipation is kept to an absolute minimum.

The PowerDI8080-5 package has a PCB footprint of 64mm², which is 40% less than that occupied by the TO263 (D2PAK) package format. It also has an off-board profile of 1.7mm, which is 63% lower than that of a TO263. The copper clip bonding between the die and the terminals facilitates a low junction-to-case thermal resistance of 0.36°C/W. This enables the PowerDI8080-5 to handle currents up to 460A and deliver a power density that is eight times greater than a TO263 package.

The DMTH4M70SPGWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Its gull wing leads facilitate optical inspection (AOI), as well as improving temperature cycling reliability.