Automotive N-channel MOSFETs

Toshiba has launched two automotive N-channel power MOSFET devices to meet the growing demand for 48V batteries and systems within automotive applications including inverters, semiconductor relays, load switches, motor drives and more.

The automotive sector requires power semiconductors that offer high levels of reliability coupled with large drain current (ID) ratings and excellent heat dissipation. This is especially true for devices used within traction inverters, battery management systems and junction boxes electric vehicles (EVs) and integrated starter generators (ISGs).

The new 80V XPQR8308QB and 100V XPQ1R00AQB are based upon Toshiba’s new U-MOS X-H process. This gives low levels of on-resistance (RDS(ON)) with the XPQR8308QB measuring less than 0,83mΩ while the XPQ1R00AQB does not exceed 1,03mΩ. The devices are rated for ID values of 350A (XPQR8308QB) and 300A (XPQ1R00AQB) continuously with pulsed values (IDP) of 1050A and 900A respectively.

Supporting these low values, the L-TOGL™ package adopts a thick copper (Cu) clip-based leadframe structure that thermally and electrically connects the MOSFET die to the package leads. This reduces the package resistance by approximately 70% and channel-to-case thermal impedance (Zth(ch-c)) by 50% compared with the TO-220SM(W) package. Together, the process and clip reduce losses and heat generation while creating a very thermally efficient solution.

Furthermore, the L-TOGL package uses compliant gull-wing leads which reduce mounting stress and improve the reliability of solder joints. It helps to ensure ECU reliability in automotive applications with harsh temperature conditions. Both devices are AEC-Q101 qualified for automotive applications.

MOSFETs are often connected in parallel to increase current capability – especially in automotive applications. To perform effectively, the MOSFET specifications must be closely matched, so Toshiba offers to ship devices grouped to within 0.4V based upon their gate threshold voltage.

Toshiba now offers four MOSFETs housed in the L-TOGL package, including Toshiba’s two existing 40V products, XPQ1R004PB and XPQR3004PB along with the products being announced today. Toshiba provides suitable products for automotive applications that increasingly require heavy currents, high power density, and excellent levels of robustness.