750-V SiC FETs feature reduced on-resistance, low intrinsic capacitance

Devices based on an advanced Gen 4 SiC FET technology platform are the first and only 750-V SiC FETs currently available on the market. These Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacenter PFC, and dc-dc conversion as well as renewable energy and energy storage.

Available in 18 and 60 mΩ options, these new SiC FETs deliver unmatched FoMs with reduced on-resistance per unit area, and low intrinsic capacitance. In hard-switching applications, the Gen 4 FETs exhibit the lowest R_DS(on) x E_OSS (mΩ-uJ) resulting in lower turn-on and turn-off loss. In soft-switching applications, their low R_DS(on) x C_oss(tr) (mΩ-nF) specification provides lower conduction loss and higher frequency. These devices not only surpass existing competitive SiC MOSFET performance whether running cool (25C°) or hot (125C°), but also offer the lowest integral diode VF with excellent reverse recovery delivering low dead-time losses and increased efficiency.

In expanding UnitedSiC’s offering to 750 V, the new devices offer more designer headroom and reduced design constraints. This higher V_DS rating also makes these FETs beneficial for 400/500-V bus voltage applications. With a widely compatible gate drive of ±20 V, 5 V V_th, all devices can be driven with 0 to +12-V gate voltages. This means they work with existing SiC MOSFET, Si IGBTs and Si MOSFET gate drivers.

As Anup Bhalla, VP Engineering at UnitedSiC, explains: “These devices help address the challenges facing engineers working across sectors with the highest voltage and power demands – from dc-dc conversion and on-board charging to power factor correction and solar inverters.

“We will be announcing many new Gen 4 devices over the next 9 months which will further improve on cost-effectiveness, heat efficiency and design headroom. This will support all sectors in overcoming the challenges of mass adoption and to accelerate innovation.”

Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs range from $3.57 for the UJ4C075060K3S to $7.20 for the UJ4C075018K4S. All devices are available from authorized distributors.

The four SiC FET devices are as follows:
Part Number                     R_DS(on) @ 25C                                   Package
UJ4C075018K3S                     18 mΩ                                     TO247-3L
UJ4C075018K4S                     18 mΩ                                     TO247-4L
UJ4C075060K3S                     60 mΩ                                    TO247-3L
UJ4C075060K4S                     60 mΩ                                    TO247-4L

United SiC, 650 College Road East, Suite 1500, Princeton, NJ 08540, info@unitedsic.com, 732.355.0550, www.unitedsic.com